ELECTRICAL PROPERTIES OF PHOSPHORUS DOPED SILICON LAYERS OBTAINED BY ION-IMPLANTATION THROUGH A PASSIVATING OXIDE

被引：2
|
作者：
VERJANS, J [1 ]
VANOVERS.R [1 ]
PATTYN, H [1 ]
DEKEERSM.R [1 ]
机构：
[1] CATHOLIC UNIV LOUVAIN,DEPT ELEKTROTECH,LAB FYS ELEKTR VAN DE HALFGELEIDERS,HEVERLEE 3030,BELGIUM
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 07期
关键词：
D O I：
10.1016/0038-1101(73)90174-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：779 / 785
页数：7
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