SILICON DOPING BY MEANS OF PHOSPHORUS ION-IMPLANTATION

被引：0
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作者：
CEMBALI, GF
GALLONI, R
PEDULLI, L
SERVIDORI, M
ZIGNANI, F
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来源：
ELETTROTECNICA | 1977年 / 64卷 / 08期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：665 / 665
页数：1
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