DISTRIBUTION PROFILES OF PHOSPHORUS IN SILICON AFTER ION-IMPLANTATION

被引：0
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作者：
MUKASHEV, BN
NUSUPOV, KK
KUSAINOV, ZA
AKHMETOV, MA
SMIRNOV, VV
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 01期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：69 / 72
页数：4
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