MOLECULAR ION-IMPLANTATION INTO SILICON

被引：1
|
作者：
MUKASHEV, BN
SMIRNOV, VV
KALBITZER, S
WEISER, M
BORRET, R
BEHAR, M
机构：
[1] MAX PLANCK INST NUCL PHYS,W-6900 HEIDELBERG 1,GERMANY
[2] UNIV FED RIO GRANDE SUL,BR-90000 PORTO ALEGRE,RS,BRAZIL
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1990年 / 114卷 / 1-2期
关键词：
a-Si:H; B +; BF2+; F+; Molecular ion implantation; N +; N2+ in c-Si; range and damage distribution;
D O I：
10.1080/10420159008213078
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The effect of molecular and atomic ion implantation into Si has been compared with respect to range and damage distribution and also, in case of dopant ions, the resulting electrical behavior after annealing treatments. The results obtained for implants of B, F and BF and N and N in c-Si show that channeling effects are suppressed and electrical activity is enhanced when the molecular species is used. For a-Si:H implants with BF2 a markedly higher conductivity is observed after annealing at 250°C than with B, presumably due to chemical side effects by F. © 1990, Taylor & Francis Group, LLC. All rights reserved.
引用
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页码：3 / 14
页数：12
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