ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SILICON

被引：0
|
作者：
NORTH, JC [1 ]
ADAMS, AC [1 ]
RICHARDS, GF [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C354 / C354
页数：1
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