DOPING OF AMORPHOUS-SILICON BY MANGANESE ION-IMPLANTATION

被引：0
|
作者：
DVURECHENSKII, AV [1 ]
RYAZANTSEV, IA [1 ]
DRAVIN, VA [1 ]
机构：
[1] PN LEBEDEV PHYS INST,MOSCOW,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 02期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：K133 / &
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