ION-IMPLANTATION DOPING OF AMORPHOUS-SILICON CONTAINING ISOVALENT GERMANIUM IMPURITIES

被引：0
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作者：
KHOKHLOV, AF
MASHIN, AI
ERSHOV, AV
MASHIN, NI
IGNATEVA, EA
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 08期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：959 / 961
页数：3
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