ION-IMPLANTATION IN AMORPHOUS-GERMANIUM AND SILICON

被引：5
|
作者：
SEKHAR, P [1 ]
JOSHI, MC [1 ]
NARASIMHAN, KL [1 ]
GUHA, S [1 ]
机构：
[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
来源：
SOLID STATE COMMUNICATIONS | 1978年 / 26卷 / 12期
关键词：
D O I：
10.1016/0038-1098(78)91255-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：933 / 936
页数：4
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