THE PROPERTIES OF AMORPHOUS-SILICON DOPED WITH ISOVALENT IMPURITIES

被引：1
|
作者：
KHOKHLOV, AF
MASHIN, AI
ERSHOV, AV
MORDVINOVA, YA
PAVLOV, DA
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1987年 / 142卷 / 02期
关键词：
D O I：
10.1002/pssb.2221420240
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：K125 / K129
页数：5
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