GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY

We present here the selective molecular-beam epitaxy (MBE) techniques used to achieve high quality material that integrates multiple device technologies on the same GaAs or InP substrate. We have successfully demonstrated selective MBE for both GaAs-based high electron mobility transistor (HEMT) - heterojunction bipolar transistor (HBT) integration and InP-based PIN diode - HEMT integration. New merged processing technologies have been developed to achieve high performance monolithic microwave and optoelectronic HEMT-HBT and PIN-HEMT integrated circuits. In each case the performance potential of discrete devices has been maintained throughout the monolithic integration process.