GAAS MOLECULAR-BEAM EPITAXY ON BE IMPLANTED GAAS-LAYERS

被引：1
|
作者：
TAKAMORI, A
MIYAUCHI, E
ARIMOTO, H
BAMBA, Y
HASHIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 08期
关键词：
D O I：
10.1143/JJAP.22.L520
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semiconducting gallium arsenide
引用
收藏
页码：L520 / L522
页数：3
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