ALGAAS/GAAS SINGLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON INP BY MOLECULAR-BEAM EPITAXY

被引：4
|
作者：
AGARWALA, S [1 ]
WON, T [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期
关键词：
D O I：
10.1063/1.100745
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1151 / 1153
页数：3
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