NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXY

被引：0

作者：

CHEN, HR ^{[1
]}

CHANG, CY ^{[1
]}

TSAI, KL ^{[1
]}

TSANG, JS ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期

关键词：

D O I：

10.1016/0038-1101(93)90256-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-stage molecular beam epitaxy (MBE) growth was employed to fabricate AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for the first time. Due to the unique base contact layer design, the base can be made very thin without increasing the extrinsic base sheet resistance and the etching of the base contact can be done very easily and very reliably. In addition, the base-collector separation layer design contributed to the reduction of parasitic capacitance. D.C. differential current gains up to 110 and 200 were obtained for 1000 and 500 angstrom base width, respectively.

引用

页码：485 / 487

页数：3

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