GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

CHO, AY

DUNN, CN

KUVAS, RL

SCHROEDER, WE

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

[2] BELL TEL LABS INC, READING, PA 19604 USA

[3] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 04期

关键词：

D O I：

10.1063/1.1655449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：224 / 226

页数：3

共 50 条

[1] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 736 - 736
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