GAAS HEAVILY DOPED WITH BE, PREPARED BY MOLECULAR-BEAM EPITAXY

被引：0
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作者：
ZHURAVLEV, KS
LUBYSHEV, DI
MIGAL, VP
PREOBRAZHENSKII, VV
STENIN, SI
TEREKHOV, SA
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来源：
INORGANIC MATERIALS | 1990年 / 26卷 / 09期
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T [工业技术];
学科分类号：
08 ;
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页码：1690 / 1691
页数：2
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