ETCHING MECHANISM OF SIO2 IN CF4-H2 MIXED GAS PLASMA

被引：0
|
作者：
ARIKADO, T [1 ]
HORIUCHI, S [1 ]
机构：
[1] NICHIDEN TOSHIBA INFORMAT SYST INC,KAWASAKI CITY,KANAGAWA 210,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C88 / C88
页数：1
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