Etching of Si, SiO2, and Si3N4 in CF4+H2 plasma at high concentration of hydrogen

被引：0

作者：

Baklanov, M.R. ^{[1
]}

Plyukhin, V.G. ^{[1
]}

机构：

[1] Russian Acad of Sciences, Novosibirsk, Russia

来源：

Physics, chemistry and mechanics of surfaces | 1993年 / 8卷 / 04期

关键词：

Carbon tetrafluoride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：578 / 582

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