Introduction of atomic H into Si3N4/SiO2/Si stacks

被引：2
|
作者：
WEBER K.J.
BLAKERS A.W.
机构：
[1] Centre for Sustainable Energy Systems Faculty of Engineering and Information Technology The Australian National University Canberra ACT 0200 Australia
[2] Centre for Sustainable Energy Systems Faculty of Engineering and Information Technology The Australian National University Canberra ACT 0200 Australia
来源：
Rare Metals | 2006年 / S1期
基金：
澳大利亚研究理事会;
关键词：
LPCVD; SiO2; passivation; anneal;
D O I：
暂无
中图分类号：
TG156.2 [退火];
学科分类号：
080201 ; 080503 ;
摘要：
Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.
引用
收藏
页码：150 / 152
页数：3
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