Introduction of atomic H into Si3N4/SiO2/Si stacks

被引：5
|
作者：
Jin Hao [1 ]
Weber, K. J.
Li Weitang
Blakers, A. W.
机构：
[1] Australian Natl Univ, Ctr Sustainable Energy Syst, Fac Engn & Informat Technol, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Phys, Canberra, ACT 0200, Australia
来源：
RARE METALS | 2006年 / 25卷
基金：
澳大利亚研究理事会;
关键词：
LPCVD; SiO2; passivation; anneal;
D O I：
10.1016/S1001-0521(07)60063-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomic H generated by a plasma NH3 source at 400 degrees C was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N-2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N-2 were carried out in order to determine the optimized annealing conditions.
引用
收藏
页码：150 / 152
页数：3
相关论文
共 50 条
  • [1] Introduction of atomic H into Si3N4/SiO2/Si stacks
    WEBER K.J.
    BLAKERS A.W.
    Rare Metals, 2006, (S1) : 150 - 152
  • [2] SOME MECHANICAL PROPERTIES OF SI3N4/SI AND SI3N4/SIO2/SI SYSTEMS
    MACKENNA, EL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : C249 - &
  • [3] LVV SPECTRA OF SI,SIO2 AND SI3N4
    JOHANNESSEN, JS
    SPICER, WE
    STRAUSSER, YE
    PHYSICA SCRIPTA, 1979, 19 (04): : 355 - 359
  • [4] Hydrogen passivation of LPCVD Si3N4/SiO2/Si stacks by ammonia plasma treatment
    Jin, Hao
    Weber, K. J.
    Blakers, A. W.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (06) : H430 - H434
  • [5] Track formation in SiO2/Si and Si3N4/Si structures
    Alzhanova, A. Ye.
    Dauletbekova, A. K.
    BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS, 2015, 2 (78): : 4 - 8
  • [6] Low thermal budget SiO2/Si3N4/SiO2 stacks for advanced SONOS memories
    Saraf, Meirav
    Akhvlediani, Roza
    Edrei, Rachel
    Edelstein, Ruth Shima
    Roizin, Yakov
    Hoffman, Alon
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)
  • [7] Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
    Li, Chen
    Metzler, Dominik
    Lai, Chiukin Steven
    Hudson, Eric A.
    Oehrlein, Gottlieb S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (04):
  • [8] A simple method to synthesize Si3N4 and Si/SiO2 nanowires from Si or Si/SiO2 mixture
    Zhang, YJ
    Wang, NL
    He, RR
    Liu, J
    Zhang, XZ
    Zhu, J
    JOURNAL OF CRYSTAL GROWTH, 2001, 233 (04) : 803 - 808
  • [9] Franz Dispersion Relation for Tunneling Simulations in Polycrystalline Silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si Structures
    Vexler, Mikhail I.
    Kuligk, Angelika
    Meinerzhagen, Bernd
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (05) : 05DE011 - 05DE015
  • [10] DEFECT CONTROL IN SI3N4/SI3N4/SIO2 STRUCTURES FOR ISOLATION PROCESSES
    CLAEYS, C
    LEUVEN, KV
    VANHELLEMONT, J
    DECLERCK, G
    VANLANDUYT, J
    VANOVERSTRAETEN, R
    AMELINCKX, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C84 - C84
12345