Introduction of atomic H into Si3N4/SiO2/Si stacks

被引：5
|
作者：
Jin Hao [1 ]
Weber, K. J.
Li Weitang
Blakers, A. W.
机构：
[1] Australian Natl Univ, Ctr Sustainable Energy Syst, Fac Engn & Informat Technol, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Phys, Canberra, ACT 0200, Australia
来源：
RARE METALS | 2006年 / 25卷
基金：
澳大利亚研究理事会;
关键词：
LPCVD; SiO2; passivation; anneal;
D O I：
10.1016/S1001-0521(07)60063-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomic H generated by a plasma NH3 source at 400 degrees C was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N-2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N-2 were carried out in order to determine the optimized annealing conditions.
引用
收藏
页码：150 / 152
页数：3
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