Etching of Si, SiO2, and Si3N4 in CF4+H2 plasma at high concentration of hydrogen

被引：0
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作者：
Baklanov, M.R. [1 ]
Plyukhin, V.G. [1 ]
机构：
[1] Russian Acad of Sciences, Novosibirsk, Russia
来源：
Physics, chemistry and mechanics of surfaces | 1993年 / 8卷 / 04期
关键词：
Carbon tetrafluoride;
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摘要：
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页码：578 / 582
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