SIMULATION OF RANGE PROFILES FOR BORON IMPLANTATION INTO SIO2/SI AND SI3N4/SIO2/SI TARGETS

被引：1

作者：

POSSELT, M ^{[1
]}

FEUDEL, T ^{[1
]}

THATER, G ^{[1
]}

机构：

[1] VEB FORSCHUNGSZENTRUM MIKROELEKTR DRESDEN,O-8080 DRESDEN,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 01期

关键词：

61.70; Tm; 61.80; Mk; 79.20; Nc;

D O I：

10.1007/BF00324457

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The simple method of profile combination is shown to be applicable to the simulation of boron profiles in SiO2/Si and Si3N4/Si layered targets. This is demonstrated by comparison with range distributions calculated by more sophisticated theoretical methods, i.e. TRIM Monte Carlo simulations and the algorithm of Christel et al., and with experimental data. The method of profile combination can also be applied to layered targets with a crystalline silicon substrate. © 1990 Springer-Verlag.

引用

页码：1 / 5

页数：5

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