ETCHING MECHANISM OF SIO2 IN CF4-H2 MIXED GAS PLASMA

被引：0
|
作者：
ARIKADO, T [1 ]
HORIUCHI, S [1 ]
机构：
[1] NICHIDEN TOSHIBA INFORMAT SYST INC,KAWASAKI CITY,KANAGAWA 210,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C88 / C88
页数：1
相关论文
共 50 条
  • [21] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS
    MOGAB, CJ
    ADAMS, AC
    FLAMM, DL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 333 - 333
  • [22] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS
    MOGAB, CJ
    ADAMS, AC
    FLAMM, DL
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803
  • [23] Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO2 at CF4/H2/Ar Plasma
    Kwon, Hee-Tae
    Bang, In-Young
    Kim, Jae-Hyeon
    Kim, Hyeon-Jo
    Lim, Seong-Yong
    Kim, Seo-Yeon
    Cho, Seong-Hee
    Kim, Ji-Hwan
    Kim, Woo-Jae
    Shin, Gi-Won
    Kwon, Gi-Chung
    NANOMATERIALS, 2024, 14 (02)
  • [24] Autonomous hybrid optimization of a SiO2 plasma etching mechanism
    Kruger, Florian
    Zhang, Du
    Luan, Pingshan
    Park, Minjoon
    Metz, Andrew
    Kushner, Mark J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (04):
  • [25] HOLLOW-CATHODE ETCHING OF SI AND SIO2 USING CF4 AND H2
    FORTUNOWILTSHIRE, G
    OEHRLEIN, GS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (05) : 1447 - 1449
  • [26] SI AND SIO2 ETCHING CHARACTERISTICS USING REACTIVE ION ETCHING WITH CF4-CL2 GAS-MIXTURE
    SHIBAGAKI, M
    HORIIKE, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : 1579 - 1580
  • [27] Effect of sidewall properties on the bottom microtrench during SiO2 etching in a CF4 plasma
    Min, JH
    Lee, GR
    Lee, JK
    Moon, SH
    Kim, CK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (02): : 425 - 432
  • [28] The mechanism of HF/H2O chemical etching of SiO2
    Kang, JK
    Musgrave, CB
    JOURNAL OF CHEMICAL PHYSICS, 2002, 116 (01): : 275 - 280
  • [29] Role of CF2 in the etching of SiO2,Si3N4 and Si in fluorocarbon plasma
    陈乐乐
    朱亮
    徐昕睿
    李东霞
    蔡辉
    包大勇
    半导体学报, 2009, (03) : 30 - 34
  • [30] Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma
    Chen Lele
    Zhu Liang
    Xu Linda
    Li Dongxia
    Cai Hui
    Tod, Pao
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (03)
12345