ISLAND FORMATION IN SB FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1 SURFACES

被引：5
|
作者：
CRICENTI, A
SELCI, S
RIGHINI, M
FERRARI, L
GENEROSI, R
BARCHESI, C
ZUCCARO, F
机构：
[1] Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, 00044 Frascati
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.48.17588
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The early stages of Sb films deposited at room temperature on Si(I 00)2 X 1 surfaces have been investigated by angle-integrated and angle-resolved Auger, spectroscopy. A comparison between the experimental results and the predictions of simple deposition models indicates that the growth of the Sb film proceeds by island formation. Without any annealing, a uniform overlayer never develops up to films 4 nm thick.
引用
收藏
页码：17588 / 17590
页数：3
相关论文
共 50 条
  • [41] Role of surface defects in room-temperature growth of metals on Si(100)2 x 1
    Kocán, N
    Sobotík, P
    Ostádal, I
    CZECHOSLOVAK JOURNAL OF PHYSICS, 2006, 56 (01) : 27 - 32
  • [42] Electron structure and elemental composition of thin films of europium deposited at room temperature on a Si(100)2 x 1 surface
    Varykhalov, AY
    Kuzmin, MV
    Mittsev, MA
    TECHNICAL PHYSICS LETTERS, 2005, 31 (01) : 51 - 54
  • [43] NH3 AND NO INTERACTION WITH SI(100)-(2X1) SURFACES
    RANGELOV, G
    STOBER, J
    EISENHUT, B
    FAUSTER, T
    PHYSICAL REVIEW B, 1991, 44 (04): : 1954 - 1957
  • [44] Formation of In-(2x1) and In islands on Si(100)-(2x1) by femtosecond pulsed laser deposition
    Hafez, M. A.
    Elsayed-Ali, H. E.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
  • [45] Effect of atomic hydrogen on the acetylene-absorbed Si(100)(2x1) surface at room temperature
    Chen, Y
    Liu, ZH
    Zhang, QZ
    Feng, KA
    Lin, ZD
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1996, 5 (06): : 450 - 455
  • [46] Thermal stability of ultra-thin CoSi2 films on Si(100)-2x1 surfaces
    Ikegami, H
    Ikeda, H
    Zaima, S
    Yasuda, Y
    APPLIED SURFACE SCIENCE, 1997, 117 : 275 - 279
  • [47] Room-temperature blue luminescence of thermally oxidized Si1-x-yGexCy thin films on Si (100) substrates
    Cheng, XM
    Zheng, YD
    Liu, XB
    Zang, L
    Lo, ZY
    Zhu, SM
    Han, P
    Jiang, RL
    APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3333 - 3335
  • [48] Competition and selectivity of organic reactions on semiconductor surfaces: Reaction of unsaturated ketones on Si(100)-2x1 and Ge(100)-2x1
    Wang, GT
    Mui, C
    Musgrave, CB
    Bent, SF
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (30) : 8990 - 9004
  • [49] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
    ASAI, M
    UEBA, H
    TATSUYAMA, C
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583
  • [50] TEMPERATURE-DEPENDENCE OF 2ND-HARMONIC GENERATION FROM SI(100)(2X1) SURFACES
    JIANG, HB
    LIU, YH
    LU, XZ
    WANG, WC
    ZHENG, JB
    ZHANG, ZM
    APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1558 - 1559
12345