ISLAND FORMATION IN SB FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1 SURFACES

被引：5
|
作者：
CRICENTI, A
SELCI, S
RIGHINI, M
FERRARI, L
GENEROSI, R
BARCHESI, C
ZUCCARO, F
机构：
[1] Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, 00044 Frascati
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.48.17588
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The early stages of Sb films deposited at room temperature on Si(I 00)2 X 1 surfaces have been investigated by angle-integrated and angle-resolved Auger, spectroscopy. A comparison between the experimental results and the predictions of simple deposition models indicates that the growth of the Sb film proceeds by island formation. Without any annealing, a uniform overlayer never develops up to films 4 nm thick.
引用
收藏
页码：17588 / 17590
页数：3
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