ISLAND FORMATION IN SB FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1 SURFACES

被引：5

作者：

CRICENTI, A

SELCI, S

RIGHINI, M

FERRARI, L

GENEROSI, R

BARCHESI, C

ZUCCARO, F

机构：

[1] Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, 00044 Frascati

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.48.17588

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The early stages of Sb films deposited at room temperature on Si(I 00)2 X 1 surfaces have been investigated by angle-integrated and angle-resolved Auger, spectroscopy. A comparison between the experimental results and the predictions of simple deposition models indicates that the growth of the Sb film proceeds by island formation. Without any annealing, a uniform overlayer never develops up to films 4 nm thick.

引用

页码：17588 / 17590

页数：3

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