HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE

被引：134
|
作者：
ASAI, M
UEBA, H
TATSUYAMA, C
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 07期
关键词：
D O I：
10.1063/1.335886
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2577 / 2583
页数：7
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