Room-temperature blue luminescence of thermally oxidized Si1-x-yGexCy thin films on Si (100) substrates

被引：1

作者：

Cheng, XM ^{[1
]}

Zheng, YD ^{[1
]}

Liu, XB ^{[1
]}

Zang, L ^{[1
]}

Lo, ZY ^{[1
]}

Zhu, SM ^{[1
]}

Han, P ^{[1
]}

Jiang, RL ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured at room temperature the photoluminescence spectra of the thermally oxidized Si1-x-yGexCy thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and then wet oxidized at 1100 degrees C for 20 min. The photoluminescence band with a peak at similar to 393 nm under the exciting radiation of lambda = 241 nm was observed. Possible mechanism of this photoluminescence is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)01147-X].

引用

页码：3333 / 3335

页数：3

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