Room-temperature blue luminescence of thermally oxidized Si1-x-yGexCy thin films on Si (100) substrates

被引：1

作者：

Cheng, XM ^{[1
]}

Zheng, YD ^{[1
]}

Liu, XB ^{[1
]}

Zang, L ^{[1
]}

Lo, ZY ^{[1
]}

Zhu, SM ^{[1
]}

Han, P ^{[1
]}

Jiang, RL ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured at room temperature the photoluminescence spectra of the thermally oxidized Si1-x-yGexCy thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and then wet oxidized at 1100 degrees C for 20 min. The photoluminescence band with a peak at similar to 393 nm under the exciting radiation of lambda = 241 nm was observed. Possible mechanism of this photoluminescence is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)01147-X].

引用

页码：3333 / 3335

页数：3

共 50 条

[21] Si/Si1-x-yGexCy/Si heterojunction bipolar transistors
Lanzerotti, LD
StAmour, A
Liu, CW
Sturm, JC
Watanabe, JK
Theodore, ND
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) : 334 - 337
[22] Synthesis of ScAlN thin films on Si (100) substrates at room temperature
Perez-Campos, A.
Sinusia Lozano, M.
Javier Garcia-Garcia, F.
Chen, Z.
Iriarte, G. F.
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2018, 24 (06): : 2711 - 2718
[23] Synthesis of ScAlN thin films on Si (100) substrates at room temperature
A. Pérez-Campos
M. Sinusía Lozano
F. Javier Garcia-Garcia
Z. Chen
G. F. Iriarte
Microsystem Technologies, 2018, 24 : 2711 - 2718
[24] Comparative study on dry oxidation of heteroepitaxial Si1-xGex and Si1-x-yGexCy on Si(100)+
J Appl Phys, 3 (1857):
[25] Si1-yCy and Si1-x-yGexCy alloy layers
Eberl, K
Brunner, K
Schmidt, OG
GERMANIUM SILICON: PHYSICS AND MATERIALS, 1999, 56 : 387 - 422
[26] Comparative study on dry oxidation of heteroepitaxial Si1-xGex and Si1-x-yGexCy on Si(100)(+)
Xiang, J
Herbots, N
Jacobsson, H
Ye, P
Hearne, S
Whaley, S
JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) : 1857 - 1866
[27] Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films
Choi, WK
Feng, W
Bera, LK
Yang, CY
Mi, J
JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) : 5819 - 5824
[28] Si1-x-yGexCy channel heterojunction PMOSFETs
John, S
Ray, SK
Oswal, SK
Banerjee, SK
MICROELECTRONIC DEVICE TECHNOLOGY, 1997, 3212 : 354 - 359
[29] Temperature dependence of Hall mobility in strained Si1-xGex/Si1-x-yGexCy
Kar, GS
Dhar, A
Ray, SK
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 395 - 398
[30] The onset of secondary phase precipitation during synthesis of heteroepitaxial Si1-x-yGexCy on Si(100)
Herbots, N
Ye, PH
Jacobsson, H
Xiang, J
Hearne, S
Cave, N
APPLIED PHYSICS LETTERS, 1996, 68 (06) : 782 - 784

← 1 2 3 4 5 →