Room-temperature blue luminescence of thermally oxidized Si1-x-yGexCy thin films on Si (100) substrates

被引：1

作者：

Cheng, XM ^{[1
]}

Zheng, YD ^{[1
]}

Liu, XB ^{[1
]}

Zang, L ^{[1
]}

Lo, ZY ^{[1
]}

Zhu, SM ^{[1
]}

Han, P ^{[1
]}

Jiang, RL ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured at room temperature the photoluminescence spectra of the thermally oxidized Si1-x-yGexCy thin films which were grown on silicon substrates by plasma-enhanced chemical vapor deposition and then wet oxidized at 1100 degrees C for 20 min. The photoluminescence band with a peak at similar to 393 nm under the exciting radiation of lambda = 241 nm was observed. Possible mechanism of this photoluminescence is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)01147-X].

引用

页码：3333 / 3335

页数：3

共 50 条

[41] Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots
Shao, XP
Jonczyk, R
Dashiell, M
Hits, D
Orner, BA
Khan, AS
Roe, K
Kolodzey, J
Berger, PR
Kaba, M
Barteau, MA
Unruh, KM
JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 578 - 582
[42] Preparation of Si1-x-yGexCy semiconductor films on Si by ion implantation and solid phase epitaxy
Lu, XQ
Wang, YY
Zhen, CM
Zhang, J
Yang, YH
Guo, YP
ACTA PHYSICA SINICA, 2002, 51 (10) : 2340 - 2343
[43] Photoluminescence and Raman spectral study of C incorporation in strained Si1-x-yGexCy epilayers on Si(100)
National Research Council, 1200 Montreal Road, Ottawa, ON K1A 0R6, Canada
Journal of Applied Physics, 2008, 103 (06):
[44] Photoluminescence and Raman spectral study of C incorporation in strained Si1-x-yGexCy epilayers on Si(100)
Rowell, N. L.
Lockwood, D. J.
Baribeau, J. -M.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
[45] The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures
Kulik, LV
Hits, DA
Dashiell, MW
Kolodzey, J
APPLIED PHYSICS LETTERS, 1998, 72 (16) : 1972 - 1974
[46] Heteroepitaxial Si1-x-yGexCy layer growth on (100)Si by atmospheric pressure chemical vapor deposition
Atzmon, Z
Bair, AE
Alford, TL
Chandrasekhar, D
Smith, DJ
Mayer, JW
EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 117 - 122
[47] Conversion of Si(100) to Si1-x-yGexCy alloy by hydrogen plasma containing Ge and C species
Sun, Y
Enokida, T
Hagino, H
Miyasato, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (3A): : 1271 - 1278
[48] Measurement of band offsets in Si/Si1-xGex and Si/Si1-x-yGexCy heterojunctions
Stein, BL
Yu, ET
Croke, ET
Hunter, AT
Laursen, T
Bair, AE
Mayer, JW
Ahn, CC
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1108 - 1111
[49] The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100) Si heterojunctions
Chang, CL
StAmour, A
Sturm, JC
APPLIED PHYSICS LETTERS, 1997, 70 (12) : 1557 - 1559
[50] Effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures
Kulik, L.V.
Hits, D.A.
Dashiell, M.W.
Kolodzey, J.
Applied Physics Letters, 1998, 72 (16):

← 1 2 3 4 5 →