THERMAL-OXIDATION KINETICS OF SILICON IN OXYGEN IN THE PRESENCE OF ANTIMONY AND BISMUTH CHLORIDES

被引：0
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作者：
UGAI, YA
ANOKHIN, VZ
MITTOVA, IY
MYACHIN, SM
PONOMAREVA, NI
机构：
来源：
ZHURNAL FIZICHESKOI KHIMII | 1981年 / 55卷 / 04期
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中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
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页码：946 / 949
页数：4
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