THERMAL-OXIDATION KINETICS OF SILICON, USING ION-IMPLANTATION ANTIMONY

被引：0
|
作者：
UGAI, YA
ANOKHIN, VZ
LOBOVA, VA
MITTOVA, IY
MEDVEDEV, NM
PASHKOVA, LI
机构：
来源：
ZHURNAL FIZICHESKOI KHIMII | 1981年 / 55卷 / 07期
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暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
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页码：1873 / 1875
页数：3
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