共 50 条
- [1] THERMAL STABILITY OF HYDROGEN IN SILICON NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (04): : 528 - 533
- [2] HYDROGEN CONCENTRATION AND BOND CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01): : 30 - 34
- [4] ION-BEAM ANALYSIS OF THE CONCENTRATION AND THERMAL RELEASE OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (08): : 1406 - 1410
- [5] INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (12): : 2015 - 2021
- [6] Ion beam analysis of the concentration and thermal release of hydrogen in silicon nitride films prepared by ECR Plasma CVD method Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (08): : 1406 - 1410
- [7] HYDROGEN CONCENTRATION AND BOND CONFIGURATIONS IN SILICON NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (01): : 30 - 34
- [9] THERMAL-STABILITY OF SINXCY FILMS PREPARED BY PLASMA CVD NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1993, 101 (07): : 757 - 763
- [10] PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L21 - L23