ANNEALING BEHAVIOR OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD

被引：6
|
作者：
KAMADA, T [1 ]
HIRAO, T [1 ]
KITAGAWA, M [1 ]
SETSUNE, K [1 ]
WASA, K [1 ]
IZUMI, T [1 ]
机构：
[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA 25912,JAPAN
来源：
APPLIED SURFACE SCIENCE | 1988年 / 33-4卷
关键词：
D O I：
10.1016/0169-4332(88)90421-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：1094 / 1100
页数：7
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