PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD

被引：17
|
作者：
HIRAO, T
SETSUNE, K
KITAGAWA, M
KAMADA, T
OHMURA, T
WASA, K
IZUMI, T
机构：
[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
[2] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA 25912,JAPAN
[3] MATSUSHITA ELECT IND CO LTD,CENT RES LABS,MORIGUCHI,OSAKA 570,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 01期
关键词：
D O I：
10.1143/JJAP.27.L21
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L21 / L23
页数：3
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