ESR STUDY OF SIN FILMS PREPARED BY ECR PLASMA CVD METHOD

被引:0
|
作者
IZUMI, T
SHIBUYA, M
HIRAO, T
KAMADA, T
MATSUMORI, T
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:420 / 422
页数:3
相关论文
共 50 条
  • [1] 2 KINDS OF DEFECT CENTERS OBSERVED IN SIN FILMS PREPARED BY ECR PLASMA CVD METHOD
    IZUMI, T
    SHIBUYA, M
    MATSUMORI, T
    HIRAO, T
    KAMADA, T
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 234 - 237
  • [2] Tungsten films prepared by ECR plasma CVD
    Akahori, Takashi
    Tani, Takayuki
    Nakayama, Satoshi
    [J]. Sumitomo Metals, 1991, 43 (04): : 37 - 43
  • [3] PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    SETSUNE, K
    KITAGAWA, M
    KAMADA, T
    OHMURA, T
    WASA, K
    IZUMI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L21 - L23
  • [4] PROPERTIES OF A-SI,H FILMS PREPARED BY ECR PLASMA CVD METHOD
    NARIKAWA, S
    HAYAKAWA, T
    ADACHI, K
    HONDA, I
    YAMAMOTO, Y
    [J]. SHARP TECHNICAL JOURNAL, 1992, (54): : 31 - 34
  • [5] EFFECTS OF IONS ON PROPERTIES OF A-SI-H FILMS PREPARED BY ECR PLASMA CVD METHOD
    AKIYAMA, K
    TANAKA, E
    TAKIMOTO, A
    WATANABE, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (12): : 2192 - 2198
  • [6] Effects of ions on properties of a-Si:H films prepared by ECR plasma CVD method
    Akiyama, Koji
    Tanaka, Eiichiro
    Takimoto, Akio
    Watanabe, Masanori
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2192 - 2198
  • [7] THERMAL STABILITY OF HYDROGEN IN SILICON NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD.
    Hirao, Takashi
    Kamada, Takeshi
    Kitagawa, Masatoshi
    Setsune, Kentaro
    Wasa, Kiyotaka
    Matsuda, Akihisa
    Tanaka, Kazunobu
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (04): : 528 - 533
  • [8] HYDROGEN CONCENTRATION AND BOND CONFIGURATIONS IN SILICON NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD.
    Hirao, Takashi
    Setsune, Kentaro
    Kitagawa, Masatoshi
    Kamada, Takeshi
    Wasa, Kiyotaka
    Tsukamoto, Kazuyoshi
    Izumi, Tomio
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (01): : 30 - 34
  • [9] THERMAL-STABILITY OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    KAMADA, T
    KITAGAWA, M
    SETSUNE, K
    WASA, K
    MATSUDA, A
    TANAKA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04): : 528 - 533
  • [10] ANNEALING BEHAVIOR OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    KAMADA, T
    HIRAO, T
    KITAGAWA, M
    SETSUNE, K
    WASA, K
    IZUMI, T
    [J]. APPLIED SURFACE SCIENCE, 1988, 33-4 : 1094 - 1100