INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD

被引：27
|
作者：
HIRAO, T [1 ]
SETSUNE, K [1 ]
KITAGAWA, M [1 ]
KAMADA, T [1 ]
WASA, K [1 ]
IZUMI, T [1 ]
机构：
[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA 25912,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期
关键词：
D O I：
10.1143/JJAP.26.2015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2015 / 2021
页数：7
相关论文
共 50 条
  • [1] INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD.
    Hirao, Takashi
    Setsune, Kentaro
    Kitagawa, Masatoshi
    Kamada, Takeshi
    Wasa, Kiyotaka
    Izumi, Tomio
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (12): : 2015 - 2021
  • [2] ANNEALING BEHAVIOR OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    KAMADA, T
    HIRAO, T
    KITAGAWA, M
    SETSUNE, K
    WASA, K
    IZUMI, T
    APPLIED SURFACE SCIENCE, 1988, 33-4 : 1094 - 1100
  • [3] HYDROGEN CONCENTRATION AND BOND CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    SETSUNE, K
    KITAGAWA, M
    KAMADA, T
    WASA, K
    TSUKAMOTO, K
    IZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01): : 30 - 34
  • [4] THERMAL-STABILITY OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    KAMADA, T
    KITAGAWA, M
    SETSUNE, K
    WASA, K
    MATSUDA, A
    TANAKA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04): : 528 - 533
  • [5] ROLE OF IONS AND RADICAL SPECIES IN SILICON-NITRIDE DEPOSITION BY ECR PLASMA CVD METHOD
    HIRAO, T
    SETSUNE, K
    KITAGAWA, M
    MANABE, Y
    WASA, K
    KOHIKI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L544 - L546
  • [6] PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    SETSUNE, K
    KITAGAWA, M
    KAMADA, T
    OHMURA, T
    WASA, K
    IZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L21 - L23
  • [7] PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY DUAL RF PLASMA DEPOSITION
    TSUKUNE, A
    NISHIMURA, M
    KOYAMA, K
    MAEDA, M
    YANAGIDA, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C317 - C317
  • [8] ION-BEAM ANALYSIS OF THE CONCENTRATION AND THERMAL RELEASE OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    KUROI, T
    UMEZAWA, K
    YAMANE, J
    SHOJI, F
    OURA, K
    HANAWA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (08): : 1406 - 1410
  • [9] THERMAL STABILITY OF HYDROGEN IN SILICON NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD.
    Hirao, Takashi
    Kamada, Takeshi
    Kitagawa, Masatoshi
    Setsune, Kentaro
    Wasa, Kiyotaka
    Matsuda, Akihisa
    Tanaka, Kazunobu
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (04): : 528 - 533
  • [10] HYDROGEN CONCENTRATION AND BOND CONFIGURATIONS IN SILICON NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD.
    Hirao, Takashi
    Setsune, Kentaro
    Kitagawa, Masatoshi
    Kamada, Takeshi
    Wasa, Kiyotaka
    Tsukamoto, Kazuyoshi
    Izumi, Tomio
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (01): : 30 - 34
12345