THERMAL-STABILITY OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD

被引：17
|
作者：
HIRAO, T [1 ]
KAMADA, T [1 ]
KITAGAWA, M [1 ]
SETSUNE, K [1 ]
WASA, K [1 ]
MATSUDA, A [1 ]
TANAKA, K [1 ]
机构：
[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 04期
关键词：
D O I：
10.1143/JJAP.27.528
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：528 / 533
页数：6
相关论文
共 50 条
  • [21] THERMAL-STABILITY OF SILICON-NITRIDE COATINGS PRODUCED BY ION ASSISTED DEPOSITION
    GRABOWSKI, KS
    KAHN, ADF
    DONOVAN, EP
    CAROSELLA, CA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 190 - 193
  • [22] APPLICATION OF THE ERD METHOD FOR HYDROGEN DETERMINATION IN SILICON (OXY)NITRIDE THIN-FILMS PREPARED BY ECR PLASMA DEPOSITION
    HRUBCIN, L
    HURAN, J
    SANDRIK, R
    KOBZEV, AP
    SHIROKOV, DM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 85 (1-4): : 60 - 62
  • [23] MICROSTRUCTURE AND PROPERTIES OF CVD SILICON-NITRIDE FILMS
    POPOVA, LI
    VITANOV, PK
    ANTOV, BZ
    PASHOV, NK
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 31 (03) : 429 - 434
  • [24] Tungsten films prepared by ECR plasma CVD
    Akahori, Takashi
    Tani, Takayuki
    Nakayama, Satoshi
    Sumitomo Metals, 1991, 43 (04): : 37 - 43
  • [25] Properties of hydrogenated amorphous silicon prepared by ECR plasma CVD method
    Kitagawa, Masatoshi
    Setsune, Kentaro
    Manabe, Yoshio
    Hirao, Takashi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (11): : 2026 - 2031
  • [26] ECR-PLASMA ETCHING OF SILICON-NITRIDE CERAMICS
    SUDA, A
    TAJIMA, I
    ISHII, M
    TADA, M
    UKYO, Y
    WADA, S
    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1993, 101 (02): : 217 - 220
  • [27] Silicon carbon nitride films deposited by ECR CVD
    Chen, KH
    Wu, JJ
    Wen, CY
    Chen, LC
    Fan, CW
    Kuo, PF
    Chen, YF
    Huang, YS
    PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX), 1999, 99 (04): : 13 - 24
  • [28] HYDROGEN-BONDING CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
    MAEDA, M
    NAKAMURA, H
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 484 - 489
  • [29] ESR STUDY OF SIN FILMS PREPARED BY ECR PLASMA CVD METHOD
    IZUMI, T
    SHIBUYA, M
    HIRAO, T
    KAMADA, T
    MATSUMORI, T
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 420 - 422
  • [30] DENSIFICATION OF PLASMA DEPOSITED SILICON-NITRIDE FILMS BY HYDROGEN DILUTION
    ROCHELEAU, RE
    ZHANG, Z
    THIN SOLID FILMS, 1992, 220 (1-2) : 73 - 79
12345