SN-DOPED GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

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作者：
FUJII, T
SUZUKI, H
HIYAMIZU, S
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来源：
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL | 1979年 / 15卷 / 04期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：121 / 130
页数：10
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