CONDITIONS FOR GENERATION OF MICROWAVE-RADIATION IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB

被引：0

作者：

KARTSIVADZE, GA

MIRIANASHVILI, SM

NANOBASHVILI, DI

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 07期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：836 / 837

页数：2

共 50 条

[1] INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB
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[2] IMPACT IONIZATION IN COMPENSATED HIGH-RESISTIVITY P-TYPE INSB
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[3] FREQUENCY OF OSCILLATIONS OF THE CURRENT IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB
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[4] INVESTIGATION OF THE PHOTOCONDUCTIVITY OF HIGH-RESISTIVITY P-TYPE INSB
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[5] SOME PROPERTIES OF A GRADIENT INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED SAMPLES OF P-TYPE INSB
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[6] PHOTOCONDUCTIVITY ANALYSIS IN HIGH-RESISTIVITY P-TYPE ZINC COMPENSATED SILICON
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[7] RESONANCES OF IMPEDANCE COMPONENTS OF HIGH-RESISTIVITY P-TYPE INSB IN AN ALTERNATING ELECTRIC FIELD
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[8] INSTABILITY OF CURRENT IN HIGH-RESISTIVITY SAMPLES OF P-TYPE INSB SUBJECTED TO CONTINUOUS FIELDS
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[9] CHARACTERISTICS OF THE ACCUMULATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY P-TYPE SILICON
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[10] HIGH-RESISTIVITY P-TYPE CADMIUM SULFIDE
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