共 50 条
- [1] INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 310 - +MIRIANASHVILI, SMNANOBASH.DI
- [2] SOME PROPERTIES OF A GRADIENT INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED SAMPLES OF P-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1956 - &MIRIANAS.SMNANOBASH.DI
- [3] FREQUENCY OF OSCILLATIONS OF THE CURRENT IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (07): : 824 - 824KARTSIVADZE, GAMIRIANASHVILI, SMNANOBASHVILI, DI
- [4] INVESTIGATION OF THE PHOTOCONDUCTIVITY OF HIGH-RESISTIVITY P-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (03): : 363 - 363MIRIANASHVILI, SMTUMANISHVILI, EPCHIKOVANI, NNKHAVTASI, LG
- [5] IMPACT IONIZATION IN COMPENSATED HIGH-RESISTIVITY P-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (10): : 1606 - +MIRIANASHVILI, SMNANOBASH.DI
- [6] DEPENDENCE, ON MAJORITY-CARRIER MOBILITY, OF CRITICAL PARAMETERS FOR APPEARANCE OF A GRADIENT INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED SAMPLES OF P-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1177 - &MIRLANAS.SMNANOBASH.DI
- [7] CONDITIONS FOR GENERATION OF MICROWAVE-RADIATION IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (07): : 836 - 837KARTSIVADZE, GAMIRIANASHVILI, SMNANOBASHVILI, DI
- [8] RESONANCES OF IMPEDANCE COMPONENTS OF HIGH-RESISTIVITY P-TYPE INSB IN AN ALTERNATING ELECTRIC FIELD[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 971 - +MIRIANASHVILI, SMNANOBASH.DI
- [9] HIGH-RESISTIVITY P-TYPE CADMIUM SULFIDE[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 145 - &CHERNOW, FCOURTENS, EDOUMA, MGOODMAN, L
- [10] BULK PROPERTIES OF HIGH-RESISTIVITY P-TYPE SILICON[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (03) : C60 - C60KLEIN, CASTRAUB, WD