BULK PROPERTIES OF HIGH-RESISTIVITY P-TYPE SILICON

被引：0

作者：

KLEIN, CA

STRAUB, WD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1959年 / 106卷 / 03期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C60 / C60

页数：1

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[1] TEMPERATURE BEHAVIOR OF P-TYPE HIGH-RESISTIVITY DIFFUSION LAYERS IN SILICON
ILIEVA, MN
PETROVA, RS
[J]. DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (01): : 33 - 35
[2] PHOTOCONDUCTIVITY ANALYSIS IN HIGH-RESISTIVITY P-TYPE ZINC COMPENSATED SILICON
RABIE, S
RUMIN, N
[J]. CANADIAN JOURNAL OF PHYSICS, 1975, 53 (10) : 1003 - 1011
[3] CHARACTERISTICS OF THE ACCUMULATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY P-TYPE SILICON
LUGAKOV, PF
LUKYANITSA, VV
SHUSHA, VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1188 - 1189
[4] HIGH-RESISTIVITY P-TYPE CADMIUM SULFIDE
CHERNOW, F
COURTENS, E
DOUMA, M
GOODMAN, L
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 145 - &
[5] SPACE-CHARGE-LIMITED CURRENTS IN HIGH-RESISTIVITY P-TYPE SILICON
HAGENLOCHER, AK
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (04) : 119 - +
[6] ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY P-TYPE SILANE SILICON IRRADIATED WITH 14 MEV NEUTRONS
KARSYBAEV, MS
TKACHEV, VD
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (09): : 1071 - 1072
[7] INVESTIGATION OF THE PHOTOCONDUCTIVITY OF HIGH-RESISTIVITY P-TYPE INSB
MIRIANASHVILI, SM
TUMANISHVILI, EP
CHIKOVANI, NN
KHAVTASI, LG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (03): : 363 - 363
[8] HIGH-RESISTIVITY IN P-TYPE INP BY DEUTERON BOMBARDMENT
FOCHT, MW
SCHWARTZ, B
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 970 - 972
[9] PREPARATION OF SURFACE-BARRIER DETECTORS FROM HIGH-RESISTIVITY P-TYPE SILICON
PROTSENKO, AV
SINITSYN, VN
PANASENK.NV
KOROL, VM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1118 - +
[10] INSTABILITY OF CURRENT IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB
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NANOBASH.DI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 310 - +

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