CHARACTERISTICS OF THE ACCUMULATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY P-TYPE SILICON

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LUGAKOV, PF

LUKYANITSA, VV

SHUSHA, VV

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 10期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1188 / 1189

页数：2

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