CHARACTERISTICS OF THE ACCUMULATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY P-TYPE SILICON

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作者：
LUGAKOV, PF
LUKYANITSA, VV
SHUSHA, VV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 10期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1188 / 1189
页数：2
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