Proton radiation damage in high-resistivity n-type silicon CCDs

被引：23

作者：

Bebek, CJ ^{[1
]}

Groom, DE ^{[1
]}

Holland, SE ^{[1
]}

Karcher, A ^{[1
]}

Kolbe, WF ^{[1
]}

Lee, J ^{[1
]}

Levi, ME ^{[1
]}

Palaio, NP ^{[1
]}

Turko, BT ^{[1
]}

Uslenghi, MC ^{[1
]}

Wagner, MT ^{[1
]}

Wang, G ^{[1
]}

机构：

[1] Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL, AND DIGITAL PHOTOGRAPHY APPLICATIONS III | 2002年 / 4669卷

关键词：

CCD; radiation damage; high resistivity silicon; charge transfer efficiency;

D O I：

10.1117/12.463422

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x10(11) protons/cm(2). The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.

引用

页码：161 / 171

页数：11

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