High-resistivity n-type silicon prepared by Czochralski growth and untraditional doping

被引：0
|
作者：
Sal'nik, ZA [1 ]
机构：
[1] Podolsk Chem Met Plant, Podolsk 142100, Moscow Oblast, Russia
来源：
INORGANIC MATERIALS | 1998年 / 34卷 / 03期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The potentialities of two methods of preparing high-resistivity (rho = 40-150 Omega cm) n-Si based on the Czochralski technique are examined. In these methods, thermal donors are generated in undoped or phosphorus-doped Czochralski-grown Si held at 350-500 degrees C at the latest stages of the fabrication of semiconductor devices. The conditions for obtaining untraditionally doped silicon during the fabrication of high-power semiconductor devices (transistors, diods, and thyristors) are outlined.
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页码：197 / 200
页数：4
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