共 50 条
- [1] DEEP LEVELS OF THERMAL DEFECTS IN HIGH-RESISTIVITY ULTRAPURE N-TYPE SILICON [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (11): : 1101 - 1106
- [2] QUENCHING OF PHOTOCONDUCTIVITY OF HIGH-RESISTIVITY N-TYPE INP [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 458 - +
- [3] SEMICONDUCTOR PARTICLE COUNTERS OF HIGH-RESISTIVITY N-TYPE SILICON [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1966, (02): : 318 - &
- [4] ION-IMPLANTED N-TYPE RESISTORS ON HIGH-RESISTIVITY SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06): : 944 - 947
- [5] Proton radiation damage in high-resistivity n-type silicon CCDs [J]. SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL, AND DIGITAL PHOTOGRAPHY APPLICATIONS III, 2002, 4669 : 161 - 171
- [6] RECOMBINATION OF CARRIERS IN HIGH-RESISTIVITY N-TYPE INSB AT 77DEGREESK [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1246 - 1248
- [9] MICROWAVE BREAKDOWN OF HIGH-RESISTIVITY N-TYPE INSB IN A MAGNETIC-FIELD [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1315 - 1316