ELECTRICAL AND STRUCTURAL-PROPERTIES OF OHMIC CONTACTS TO N-TYPE AND HIGH-RESISTIVITY CDTE

被引：0
|
作者：
KAMINSKA, E
PIOTROWSKA, A
GUZIEWICZ, M
GIERLOTKA, S
PAPIS, E
LUSAKOWSKI, J
SZADKOWSKI, K
KWIATKOWSKI, S
DIETL, T
GRABECKI, G
JAROSZYNSKI, J
KARCZEWSKI, G
ZAKRZEWSKI, AK
机构：
[1] POLISH ACAD SCI, UNIPRESS, PL-01142 WARSAW, POLAND
[2] UNIV WARSAW, INST EXPTL PHYS, PL-00681 WARSAW, POLAND
[3] A SOLTAN INST NUCL STUDIES, PL-00681 WARSAW, POLAND
[4] POLISH ACAD SCI, INST PHYS, PL-02668 WARSAW, POLAND
来源：
ACTA PHYSICA POLONICA A | 1995年 / 87卷 / 02期
关键词：
D O I：
10.12693/APhysPolA.87.411
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of contacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.
引用
收藏
页码：411 / 414
页数：4
相关论文
共 50 条
  • [1] OHMIC ELECTRICAL CONTACTS TO HIGH-RESISTIVITY ZNS CRYSTALS
    BLOUNT, GH
    FISHER, MW
    MORRISON, RG
    BUBE, RH
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 690 - &
  • [2] Electrical and structural properties of Ti/W/Au ohmic contacts on n-type GaN
    Reddy, VR
    Seong, TY
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (08) : 975 - 979
  • [3] Electrical properties of undoped high-resistivity n-CdTe polycrystals
    Yu. V. Klevkov
    S. A. Kolosov
    A. F. Plotnikov
    [J]. Semiconductors, 2007, 41 : 651 - 654
  • [4] Electrical properties of undoped high-resistivity n-CdTe polycrystals
    Klevkov, Yu. V.
    Kolosov, S. A.
    Plotnikov, A. F.
    [J]. SEMICONDUCTORS, 2007, 41 (06) : 651 - 654
  • [5] CONTRIBUTION TO DETERMINATION OF DEEP TRAPPING LEVELS IN HIGH-RESISTIVITY FILMS OF N-TYPE CDTE
    LHERMITTE, C
    CARLES, D
    VAUTIER, C
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 273 - 276
  • [6] SPECIFIC CONTACT RESISTIVITY OF INDIUM CONTACTS TO N-TYPE CDTE
    NOZAKI, S
    MILNES, AG
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 137 - 155
  • [7] Edge effect in ohmic contacts on high-resistivity semiconductors
    Ruzin, Arie
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 806 : 356 - 359
  • [8] ELECTRICAL PROPERTIES OF N-TYPE CDTE
    SEGALL, B
    HALSTED, RE
    LORENZ, MR
    [J]. PHYSICAL REVIEW, 1963, 129 (06): : 2471 - &
  • [9] EXTREMELY LOW RESISTIVITY ERBIUM OHMIC CONTACTS TO N-TYPE SILICON
    JANEGA, PL
    MCCAFFREY, J
    LANDHEER, D
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1415 - 1417
  • [10] Ohmic contacts to n-type germanium with low specific contact resistivity
    Gallacher, K.
    Velha, P.
    Paul, D. J.
    MacLaren, I.
    Myronov, M.
    Leadley, D. R.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (02)
12345