OHMIC ELECTRICAL CONTACTS TO HIGH-RESISTIVITY ZNS CRYSTALS

被引：13
|
作者：
BLOUNT, GH
FISHER, MW
MORRISON, RG
BUBE, RH
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 07期
关键词：
D O I：
10.1149/1.2424092
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：690 / &
相关论文
共 50 条
  • [1] Edge effect in ohmic contacts on high-resistivity semiconductors
    Ruzin, Arie
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 806 : 356 - 359
  • [2] LOW-TEMPERATURE OHMIC CONTACTS ON HIGH-RESISTIVITY SILICON
    LI, G
    SHEN, FH
    YAO, KH
    QUE, DL
    [J]. CHINESE PHYSICS, 1989, 9 (02): : 541 - 543
  • [3] ELECTRICAL AND STRUCTURAL-PROPERTIES OF OHMIC CONTACTS TO N-TYPE AND HIGH-RESISTIVITY CDTE
    KAMINSKA, E
    PIOTROWSKA, A
    GUZIEWICZ, M
    GIERLOTKA, S
    PAPIS, E
    LUSAKOWSKI, J
    SZADKOWSKI, K
    KWIATKOWSKI, S
    DIETL, T
    GRABECKI, G
    JAROSZYNSKI, J
    KARCZEWSKI, G
    ZAKRZEWSKI, AK
    [J]. ACTA PHYSICA POLONICA A, 1995, 87 (02) : 411 - 414
  • [4] Contacts for High-Resistivity (Cd,Mn)Te Crystals
    Witkowska-Baran, M.
    Mycielski, A.
    Kochanowska, D.
    Szadkowski, A. J.
    Jakiela, R.
    Witkowska, B.
    Kaliszek, W.
    Domagala, J.
    Lusakowska, E.
    Domukhovski, V.
    Dybko, K.
    Cui, Y.
    James, R. B.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (01) : 347 - 353
  • [5] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF HIGH-RESISTIVITY CRYSTALS OF CADMIUM TELLURIDE
    AGRINSKAYA, NV
    ARKADEVA, EN
    MATVEEV, OA
    RUD, YV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 776 - +
  • [6] Electrical properties of Schottky diodes using high-resistivity CdTe crystals
    Ukrainets, VO
    Il'chuk, GA
    Ukrainets, NA
    Rud', YV
    Ivanov-Omskii, VI
    [J]. TECHNICAL PHYSICS LETTERS, 1999, 25 (08) : 642 - 644
  • [7] Electrical properties of Schottky diodes using high-resistivity CdTe crystals
    V. O. Ukrainets
    G. A. Il’chuk
    N. A. Ukrainets
    Yu. V. Rud’
    V. I. Ivanov-Omskii
    [J]. Technical Physics Letters, 1999, 25 : 642 - 644
  • [8] INJECTION PROPERTIES OF CONTACTS WITH HIGH-RESISTIVITY SEMICONDUCTORS
    LUKYANCHENKO, AI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (08): : 934 - 935
  • [9] PHOTOELECTRIC PROPERTIES OF DIODES MADE OF HIGH-RESISTIVITY ZNS
    LOSEV, VV
    ORLOV, BM
    STAFEEV, VI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 25 - 28
  • [10] The effect of Te dopant on the optical and electrical properties of high-resistivity AlSb crystals
    Yin, Ziang
    Jie, Wanqi
    Zhang, Xianggang
    Wang, Tao
    [J]. JOURNAL OF APPLIED PHYSICS, 2020, 128 (02)
12345