Electrical properties of Schottky diodes using high-resistivity CdTe crystals

被引：0
|
作者：
V. O. Ukrainets
G. A. Il’chuk
N. A. Ukrainets
Yu. V. Rud’
V. I. Ivanov-Omskii
机构：
[1] Lvov Polytechnic State University,A. F. Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
来源：
Technical Physics Letters | 1999年 / 25卷
关键词：
Electrical Property; Halogen; Barrier Height; Schottky Barrier; Transport Reaction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The Schottky barrier height is measured for single crystals doped with the halogens Cl, Br, and I during growth by chemical transport reactions. The measurements are made using a modification of the F(V) function [N. V. Agrinskaya, Mater. Sci. Eng. B 16, 172 (1993)] proposed by the authors.
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页码：642 / 644
页数：2
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